any changing of specification will not be informed individual S9015 p np silicon low frequency, low noise amplifier devi ce m arki n g S9015 = m 6 power dissipation pcm : 0.2 w collector current icm : -0.1 a collector-base voltage features collector 3 1 base 2 emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente 1 2 electrical characteristics ( tamp.=25 o c unless otherwise specified) v (br)cbo : -50 v operating & storage junction temperature t j , t stg : - 55 o c ~ + 150 o c 3 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t c o l l ec t o r - b as e b r eakdow n vo l t ag e v ( b r) cb o i c = - 100 a, i e =0 - 50 v c o l l e c t o r - e m i t t er br ea kdow n vo l t age v ( b r) ce o ic = -0 .1 ma , i b =0 - 45 v e m i t t e r - b ase br eak dow n vo l t age v ( br ) ebo i e = - 100 a, i c =0 -5 v c o lle c to r c u t-o ff c u rre n t i cb o v cb =- 50 v , i e =0 - 0 . 1 a e m i t t e r cut - of f cur r ent i ebo v eb = - 5 v , i c =0 - 0 . 1 a d c cur r ent ga i n h fe (1 ) v ce =- 5v , i c = - 1 m a 200 1000 c o l l ec t o r - e m i t t er sat u r a t i o n vo l t a g e v ce (s a t ) i c = - 1 00m a , i b = -1 0 m a -0 .3 v b ase- e m i t t e r sat u r at i o n vo l t ag e v be (s a t ) i c = - 1 00m a , i b = -1 0 ma -1 v t r ans i t i on f r e quency f t v ce =- 5v , i c = - 1 0m a f= 30 m h z 150 m h z c l a ssif i c a t ion of h fe (1 ) ra nk l h ra nge 200- 45 0 450- 10 00 01 -jun-2004 rev. b page 1 of 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual S9015 pnp silicon low frequency, low noise amplifier http://www.secosgmbh.com elektronische bauelemente typi c a l char a c teri st i c s f i g u re 1. st ati c ch aracteri s ti c f i g u r e 2. dc c u rren t g a i n f i g u re 3. base-e m i tter satu rati o n vo l t ag e co l l ecto r -e mi tt er s a tu r a ti o n v o l t ag e f i g u re 4 . base-em i t t e r o n v o l t ag e f i g u re 5. co l l ecto r o u tp u t cap aci t an ce f i g u r e 6. cu rren t g i an ban d w i d t h pro d u ct -0 -2 -4 -6 -8 -1 0 -1 2 -1 4 -1 6 -1 8 -2 0 -0 -1 0 -2 0 -3 0 -4 0 -5 0 i b = - 400 a i b = - 350 a i b = - 300 a i b = - 250 a i b = - 200 a i b = - 150 a i b = - 100 a i b = - 5 0 a i c [ m a] , col l e ct or curre nt v ce [v ], colle ct o r -e m i t t e r v olt a ge - 0. 1 - 1 - 10 - 100 - 1000 -1 0 - 100 - 1000 v ce = - 5 v h fe , dc c urrent gain i c [m a ] , co lle ct o r curr e n t -0 .1 -1 -1 0 -1 0 0 -1 0 - 100 - 100 0 i c = 20 i b v be (s a t ) v ce (s a t ) v be (s a t ), v ce ( s at ) [ m v] , sat u r ati o n vo l t age i c [ m a] , co l l e c t o r cu rren t -0 .0 -0 .2 -0 .4 -0 .6 -0 .8 -1 .0 -1 .2 -0 .1 -1 -1 0 - 100 v ce = - 5 v i c [ m a ], co ll e c t o r cu rre nt v be [ v] , base- emi t t er vo l t ag e -1 -10 -10 0 1 10 f = 1 m h z i e = 0 c ob [ p f ] , o u tput capaci t anc e v cb [ v ] , co l l ecto r- base v o l t ag e -1 -1 0 10 100 1000 v ce = - 6 v f t [ m hz], c urr ent gai n band w idt h pro duct i c [m a ], c o l l e c t o r cu rre n t 01 -jun-200 4 rev. b page 2 of 2
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